IC manufacturing is a complex process. their is list to perform the IC fabrication which is listed below.
steps for IC fabrication.
Lithography: The process for pattern definition by applying thin uniform layer of viscous liquid (photo-resist) on the wafer surface. The photo-resist is hardened by baking and than selectively removed by projection of light through a reticle containing mask information.
Etching: Selectively removing unwanted material from the surface of the wafer. The pattern of the photo-resist is transferred to the wafer by means of etching agents.
Deposition: Films of the various materials are applied on the wafer. For this purpose mostly two kind of processes are used, physical vapor deposition (PVD) and chemical vapor deposition (CVD).
Chemical Mechanical Polishing: A planarization technique by applying a chemical slurry with etchant agents to the wafer surface.
Oxidation: In the oxidation process oxygen (dry oxidation) or H$ _2$O (wet oxidation) molecules convert silicon layers on top of the wafer to silicon dioxide.
Ion Implantation: Most widely used technique to introduce dopant impurities into semiconductor. The ionized particles are accelerated through an electrical field and targeted at the semiconductor wafer.
Diffusion: A diffusion step following ion implantation is used to anneal bombardment-induced lattice defects.
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